2SA1981

Semiconductor 2SA1981 PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344 Ordering Information Type NO. 2SA1981 Marking A1981 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Emitter 2. Collector 3. Base 1.20±0.1 0.38 KST-9003-001 1 2SA1981 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -35 -30 -5 -800 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE fT Cob * Test Condition IC=-500µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-500mA, IB=-20mA VCE=-5V, IE=10mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -35 -30 -5 100 120 19 -0.1 -0.1 320 -0.5 - Unit V V V µA µA V MHz pF VCE(sat) * : hFE rank / O : 100~200, Y : 160~320 KST-9003-001 2 2SA1981 Electrical Characteristic Curves Fig. 1 Pc-Ta Fig. 2 IC -VBE Fig. 3 IC - VCE Fig. 4 hFE - IC Fig. 5 VCE(SAT) - IC KST-9003-001 3