2SC5345

Semiconductor 2SC5345 NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response Ordering Information Type NO. 2SC5345 Marking C5345 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 14.0±0.40 2.06±0.1 1.27 Typ. 2.54 Typ. 123 1.20±0.1 PIN Connections 1. Emitter 2. Collector 3. Base 0.38 KST-9007-001 1 2SC5345 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature range Ta=25°C Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Ta=25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE fT Cob * Test Condition IC=10µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IE=-1mA VCB=6V, IE=0, f=1MHz Min. Typ. Max. 30 20 4 40 550 1.4 0.5 0.5 240 0.3 - Unit V V V µA µA V MHz pF VCE(sat) * : hFE rank / R : 40~80, O : 70~140, Y : 120~240 KST-9007-001 2 2SC5345 Electrical Characteristic Curves Fig. 1 PC –Ta Fig. 2 IC-VCE Fig. 3 hFE-IC Fig. 4 fT-IE Fig. 5 Cob-VCB, Cib-VEB Fig. 6 Yie-IC KST-9007-001 3 2SC5345 Electrical Characteristic Curves Fig. 7 IC-Yoe Fig. 8 IC-Yfe Fig. 9 IC - Yre KST-9007-001 4