A220

Semiconductor SRA2202SF PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2202SF Marking RA2 Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : ■ Equivalent Circuit C(OUT) mm 1 2.9±0.1 1.90 BSC 3 0.4±0.05 B(IN) R1 2 0.15±0.05 R2 E(COMMON) 0.9±0.1 0~0.1 PIN Connections 1. Base 2. Emitter 3. Collector R1 10KΩ R2 10KΩ KSR-2010-000 1 SRA2202SF Absolute maximum ratings Characteristic Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature (Ta=25°C) Symbol VO VI IO PD TJ TSTG Ratings -50 -30 -100 200 150 -55 ∼ 150 Unit V V mA mW °C °C Electrical Characteristics Characteristic Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current (Ta=25°C) Symbol IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * Test Condition VO=-50V, VI=0 VO=-5V, IO=-10mA IO=-10mA, II=-0.5mA VO=-0.2V, IO=-5mA VO=-5V, IO=-0.1mA VO=-10V, IO=-5mA VI=-5V Min. Typ. Max. 50 -1.0 80 -0.1 -1.8 -1.2 200 -500 -0.3 -2.4 -0.88 Unit nA V V V MHz mA II * : Characteristic of Transistor Only KSR-2010-000 2 SRA2202SF Electrical Characteristic Curves Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KSR-2010-000 3