B772

Semiconductor STB772 PNP Silicon Transistor Description • • • • Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STD882 Switching Application Ordering Information Type NO. STB772 Marking STB772 Package Code MPT Outline Dimensions unit : mm 6.5±0.2 21.5±1.0 1.1±0.1 1.2 Max. 0.70 Max. 0.4~0.6 1 2 3 2.5±0.1. 5.0±0.2 3.4±0.2 2.0±0.1 0.5±0.2 12.5 Min. 8.5±0.2 PIN Connections 1. Emitter 2. Collector 3. Base KST-B015-001 1 STB772 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -15 -12 -5 -5 1.2 150 -55~150 Unit V V V A W °C °C * : When mounted on 40×40×0.8mm ceramic substate Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat1) VBE(sat) fT Cob Test Condition IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-12V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-500mA VCE=-2V, IC=-3A IC=-3A, IB=-150mA IC=-3A, IB=-150mA VCB=-5V, IC=-500mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -15 -12 -5 160 40 150 -1 -1 320 -0.5 -1.2 50 Unit V V V µA µA V V MHz pF KST-B015-001 2 STB772 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 Ic - VBE Fig. 3 hFE - IC Fig. 4 VCE(sat) - IC KST-B015-001 3