BF422

Semiconductor BF422 NPN Silicon Transistor Descriptions • High voltage application • Monitor equipment application Features • Collector-Emitter voltage : VCEO=250V • Complementary pair with BF423 Ordering Information Type NO. BF422 Marking BF422 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 unit : mm 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Emitter 2. Collector 3. Base 1.20±0.1 0.38 KST-9065-000 1 BF422 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 250 250 5 100 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance Symbol BVCEO ICBO IEBO hFE VCE(sat) fT Cob Test Condition IC=1mA, IB=0 VCB=200V, IE=0 VEB=5V, IC=0 VCE=20V, IC=25mA IC=30mA, IB=5mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0, f=1MHz Min. Typ. Max. 250 50 100 1 100 100 0.6 - Unit V nA nA V MHz pF KST-9065-000 2