BF423

Semiconductor BF423 PNP Silicon Transistor Descriptions • High voltage application • Monitor equipment application Features • Collector-Emitter voltage : VCEO=-250V • Complementary pair with BF422 Ordering Information Type NO. BF423 Marking BF423 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 unit : mm 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Emitter 2. Collector 3. Base 1.20±0.1 0.38 KST-9066-000 1 BF423 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -250 -250 -5 -100 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance Symbol BVCEO ICBO IEBO hFE VCE(sat) fT Cob Test Condition IC=-1mA, IB=0 VCB=-200V, IE=0 VEB=-5V, IC=0 VCE=-20V, IC=-25mA IC=-30mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-20V, IE=0, f=1MHz Min. Typ. Max. -250 50 100 1 -100 -100 -0.6 - Unit V nA nA V MHz pF KST-9066-000 2