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NT332

NT332

  • 厂商:

    AUK(光电子)

  • 封装:

  • 描述:

    NT332 - PNP Silicon Transistor - AUK corp

  • 详情介绍
  • 数据手册
  • 价格&库存
NT332 数据手册
Semiconductor NT332 PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.15V(Max.) • Extremely small size package: 0.8x0.6x0.4 ㎜ Typ. • Complementary pair with NT331 Ordering Information Type NO. NT332 Marking P□ □:hFE rank Package Code SOT-923 Outline Dimensions unit : mm 0.27 Max. 0.90~1.10 0.05 Max. 0.75~0.85 0.35 Typ. 0.55~0.65 0.36~0.42 0.22 Max. Equivalent Circuit 0.36~0.43 0.15 Max. PIN Connections 1. Base 2. Emitter 3. Collector KSD-T5G002-000 1 NT332 Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range (Ta=25°C) Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -20 -20 -5 -50 50 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO ICBO IEBO hFE* VCE(sat) VBE fT Cob Test Condition IC=-1mA, IB=0 VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-50mA, IB=-5mA VCE=-6V, IC=-2mA VCE=-10V, IC=-10mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -20 120 -0.7 200 4 -0.1 -0.1 400 -0.15 -0.9 - Unit V µA µA V V MHz pF *: hFE rank / Y : 120~240, G : 200~400 KSD-T5G002-000 2 NT332 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE C Fig. 3 IC - VCE Fig. 4 hFE - IC ㎂ Fig. 5 VCE(sat) - IC Fig. 6 hFE - IC KSD-T5G002-000 3 NT332 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T5G002-000 4
NT332
1. 物料型号: - 型号:NT332 - 封装:SOT-923

2. 器件简介: - 描述:通用小信号放大器 - 特性: - 低集电极饱和电压:$V_{CE(sat)} = -0.15V$(最大值) - 极小尺寸封装:0.8x0.6x0.4 mm(典型值) - 与NT331配对使用

3. 引脚分配: - 1. 基极(Base) - 2. 发射极(Emitter) - 3. 集电极(Collector)

4. 参数特性: - 绝对最大额定值: - 集电极-基极电压:$VCBO = -20V$ - 集电极-发射极电压:$VCEO = -20V$ - 发射极-基极电压:$VEBO = -5V$ - 集电极电流:$Ic = -50mA$ - 集电极功率耗散:$Pc = 50mW$ - 结温:$Tj = 150℃$ - 存储温度范围:$Tstg = -55~150℃$ - 电特性($Ta=25℃$): - 集电极-发射极击穿电压:$BVCEO = -20V$ - 集电极截止电流:$ICBO = -0.1A$ - 发射极截止电流:$IEBO = -0.1A$ - DC电流增益:$hFE = 120~400$ - 集电极-发射极饱和电压:$Vce(sat) = -0.15V$ - 基极-发射极电压:$VBE = -0.7~-0.9V$ - 转换频率:$fT = 200MHz$ - 集电极输出电容:$Cab = 4pF$

5. 功能详解: - 该晶体管主要用于小信号放大,具有低集电极饱和电压和极小尺寸封装的特点,适用于需要小尺寸和低功耗放大器的场合。

6. 应用信息: - 适用于一般电子设备(办公和通信设备、测量设备、家用电器等)的组件使用。在使用这些AUK公司产品于需要高质量和/或可靠性的设备中,以及可能对人类生命福利产生重大影响的设备中(如原子能控制、飞机、宇宙飞船、运输、燃烧控制、各种安全设备等),请务必在使用前与我们咨询。未经与AUK公司事先咨询,不得在上述设备中使用这些AUK公司产品,AUK公司不承担由此造成的任何损害。

7. 封装信息: - 封装类型:SOT-923 - 外形尺寸:0.8x0.6x0.4 mm(典型值)
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