PN2222A

Semiconductor PN2222A NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with PN2907A Ordering Information Type NO. PN2222A Marking PN2222A Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 14.0±0.40 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Emitter 2. Base 3. Collector 1.20±0.1 0.38 KST-9008-000 1 PN2222A Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range Ta=25°C Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 75 40 5 600 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time Ta=25°C Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob td tr ts tf Test Condition IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=75V, IE=0 VCE=10V, IC=10mA IC=150mA, IB=15mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30Vdc, VBE(off)=0.5Vdc, IC=150mAdc, IB1=15mAdc VCC=30Vdc,IC=150mAdc, IB1=IB2=15mAdc Min. Typ. Max. 75 40 5 100 250 20 0.4 8 10 25 225 60 Unit V V V nA V MHz pF ns ns ns ns KST-9008-000 2 PN2222A Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC Fig. 4 Cob-VCB KST-9008-000 3