PN2907

Semiconductor PN2907 PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with PN2222 Ordering Information Type NO. PN2907 Marking PN2907 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Emitter 2. Base 3. Collector 1.20±0.1 0.38 KST-9039-000 1 PN2907 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range Ta=25°C Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -60 -40 -5 -600 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time Ta=25°C Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob ton td tr toff ts tf Test Condition IC=-10µA, IE=0 IC=-10mA, IB=0 IE=-10µA, IC=0 VCB=-40V, IE=0 VCE=-10V, IC=-10mA IC=-150mA, IB=-15mA VCE=-5.0V, IC=-20mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCC=-30Vdc,IC=-150mAdc, IB1=-15mAdc Min. Typ. Max. -60 -40 -5 100 200 -20 -0.4 8 45 10 40 100 80 30 Unit V V V nA V MHz pF ns ns ns ns ns ns VCC=-6.0Vdc,IC=-150mAdc, IB1=IB2=-15mAdc - KST-9039-000 2 PN2907 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC Fig. 4 Cob-VCB KST-9039-000 3