SB3317-GB

Semiconductor SB3317-G / SB3317-G(B) High Brightness LED Lamp Features • Colorless transparency lens type • φ3mm(T-1) all plastic mold type • Super luminosity Outline Dimensions STRAIGHT TYPE 3.0±0.2 unit : STOPPER TYPE 3.0±0.2 mm 5.3±0.2 2.9±0.2 5.3±0.2 2.9±0.2 5.2±0.5 0.4 23.0MIN 0.4 23.0MIN 1.0MIN 2.54 NOM 2.54 NOM 1.0MIN 12 3.8±0.2 3.6±0.2 12 3.8±0.2 3.6±0.2 PIN Connections 1.Anode 2.Cathode KLB-2002-001 1 SB3317-G / SB3317-G(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature * Soldering Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Tsol Ratings 80 20 50 4 -25∼85 -30∼100 260℃ for 5 seconds Unit mW mA mA V ℃ ℃ *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Forward Voltage * Luminous Intensity Peak Wavelength Spectrum Bandwidth Reverse Current *3Half angle 4 Symbol VF IV λP Δλ IR θ1/2 Test Condition IF= 20mA IF= 20mA IF= 20mA IF= 20mA VR=4V IF= 20mA Min. 520 - Typ. 3.4 1000 468 26 ±22 Max. 4.0 1760 10 - Unit V mcd nm nm uA deg *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *4. Luminous Intensity Maximum tolerance for each Grade Classification limit is ±18% *4. Luminous Intensity classification P 520 ~ 780 Q 780 ~ 1170 R 1170 ~ 1760 KLB-2002-001 2 SB3317-G / SB3317-G(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IV - IF Forward Voltage VF [V] Luminous Intensity Iv [mcd] Forward Current IF [mA] Forward Current IF [mA] Fig. 3 IF – Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Ambient Temperature Ta [℃] Relative Intensity [%] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Luminous Intensity Iv [%] KLB-2002-001 3