SBC327_1

Semiconductor SBC327 PNP Silicon Transistor Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary Pair with SBC337 Ordering Information Type NO. SBC327 Marking SBC327 Package Code0 TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 123 1.20±0.1 0.38 PIN Connections 1. Collector 2. Base 3. Emitter KST-9020-000 1 SBC327 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -50 -35 -5 -800 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob Test Condition IC=-1mA, IB=0 VCE=-1V, IC=-300mA IC=-500mA, IB=-50mA VCB=-25V, IE=0 VCE=-1V, IC=-100mA VCB=-5V, IE=10mA f=100MHz VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -35 100 100 16 -1.2 -700 -100 630 - Unit V V mV nA MHz pF * : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630 KST-9020-000 2 SBC327 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC -VBE Fig. 3 IC - VCE Fig. 4 hFE - IC Fig. 5 VCE(sat) - IC KST-9020-000 3