SBT2222F_1

Semiconductor SBT2222F NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907F Ordering Information Type NO. SBT2222F Marking 1B Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2079-000 0.9±0.1 0~0.1 1 SBT2222F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range * : Package mounted on 99.5% alumina 10×8×0.6mm Ta=25°C Symbol VCBO VCEO VEBO IC PC * Ratings 60 30 5 600 350 150 -55~150 Unit V V V mA mW °C °C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time Ta=25°C Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob td tr ts tf Test Condition IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=10V, IC=10mA IC=150mA, IB=15mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30Vdc, VBE(off)=0.5Vdc, IC=150mAdc, IB1=15mAdc VCC=30Vdc,IC=150mAdc, IB1=IB2=15mAdc Min. Typ. Max. 60 30 5 100 250 20 0.4 8 10 25 225 60 Unit V V V nA V MHz pF ns ns ns ns KST-2079-000 2 SBT2222F Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC Fig. 4 Cob-VCB KST-2079-000 3