SBT3904

Semiconductor SBT3904 NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with SBT3906 Ordering Information Type NO. SBT3904 Marking 1A Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 2.9±0.1 1.12 Max. KST-2022-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 0~0.1 -0.03 +0.05 1 SBT3904 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range Ta=25°C Symbol VCBO VCEO VEBO IC PC * Ratings 60 40 6 200 350 150 -55~150 Unit V V V mA mW °C °C Tj Tstg * : Package mounted on 99.5% alumina 10×8×0.6mm Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time Ta=25°C Symbol BVCBO BVCEO BVEBO ICEX hFE VCE(sat) fT Cob td tr ts tf Test Condition IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCE=30V, VEB=3V VCE=1V, IC=10mA IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VCC=3Vdc, VBE(off)=0.5Vdc. IC=10mAdc, IB1=1mAdc VCC=3Vdc,IC=10mAdc, IB1=IB2=1mAdc Min. 60 40 6 100 300 - Typ. Max. 50 300 0.3 4 35 35 200 50 Unit V V V nA V MHz pF ns ns ns ns KST-2022-000 2 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC SBT3904 Fig. 3 VCE(sat)-IC KST-2022-000 3