SBT3906

Semiconductor SBT3906 PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with SBT3904 Ordering Information Type NO. SBT3906 Marking 2A Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 2.9±0.1 1.12 Max. 0.38 0~0.1 PIN Connections 1. Emitter 2. Base 3. Collector KST-2023-000 0.124 -0.03 +0.05 1 SBT3906 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range * : Package mounted on 99.5% alumina 10×8×0.6mm Ta=25°C Symbol VCBO VCEO VEBO IC PC * Ratings -40 -40 -5 -200 350 150 -55~150 Unit V V V mA mW °C °C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time Ta=25°C Symbol BVCBO BVCEO BVEBO ICEX hFE VCE(sat) fT Cob td tr ts tf Test Condition IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCE=-30V, VEB=-3V VCE=-1V, IC=-10mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VCC=-3Vdc, VBE(off)=-0.5Vdc, IC=-10mAdc, IB1=-1mAdc VCC=-3Vdc,IC=-10mAdc, IB1=IB2=-1mAdc Min. -40 -40 -5 100 250 - Typ. Max. -50 300 -0.4 4.5 35 35 225 75 Unit V V V nA V MHz pF ns ns ns ns KST-2023-000 2 SBT3906 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC KST-2023-000 3