SBT42

Semiconductor SBT42 NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCEO=SBT42 : 300V • Complementary pair with SBT92 Ordering Information Type NO. SBT42 Marking M1A Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 0.38 0~0.1 -0.03 +0.05 2.9±0.1 PIN Connections 1. Base 2. Emitter 3. Collector KST-2040-002 0.124 1 SBT42 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter Current Collector dissipation Junction temperature Storage temperature * ： Package Mounted on 99.5% Alumina 10×8×0.6mm (Ta=25°C) Symbol VCBO VCEO VEBO IC IE PC* Tj Tstg Ratings 300 300 6 500 -500 350 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE * * * Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=20V, IC=10mA VCB=20V, IE=0, f=1MHz Min. Typ. Max. 300 300 6 40 50 0.1 0.1 0.5 0.9 3 Unit V V V µA µA V V MHz pF VCE(sat) fT Cob VBE(sat) * ： Pulse Tester： Pulse Width ≤ 300 ㎲, Duty Cycle≤ 2.0% KST-2040-002 2 SBT42 Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(sat),VBE(sat) - IC Fig. 3 fT - IC Fig. 4 COb - VR KST-2040-002 3