SBT5401F

Semiconductor SBT5401F PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with SBT5551F Ordering Information Type NO. SBT5401F Marking NFN Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2096-000 0.9±0.1 0~0.1 1 SBT5401F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -160 -150 -5 -600 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector-Emitter saturation voltage Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE (1) hFE (2) hFE (3) VCE(sat)(1) VBE(sat)(1) fT Cob * Test Condition IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-10mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -160 -150 -5 50 60 50 100 -0.2 -0.5 -1 -1 400 6 240 -100 -100 Unit V V V nA nA V V V V MHz pF VCE(sat)(2)* * VBE(sat)(2)* * : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0% KST-2096-000 2 SBT5401F Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 IC - VBE Fig. 3 fT - IC Fig. 4 VCE(sat), VBE(sat) - IC Fig. 5 Cob - VCB KST-2096-000 3