SBT92

Semiconductor SBT92 PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 Ordering Information Type NO. SBT92 Marking M2A Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 0.38 0~0.1 0.124 -0.03 +0.05 2.9±0.1 PIN Connections 1. Base 2. Emitter 3. Collector KST-2041-002 1 SBT92 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter current Collector dissipation Junction temperature Storage temperature * : Package mounted on 99.5% alumina 10×8×0.6mm (Ta=25°C) Symbol VCBO VCEO VEBO IC IE PC * Ratings -300 -300 -6 -500 500 350 150 -55~150 Unit V V V mA mA mW °C °C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE * * Test Condition IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 VCE=-10V, IC=-30mA IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-20V, IC=-10mA VCB=-20V, IE=0, f=1MHz Min. Typ. Max. -300 -300 -6 40 50 -0.1 -0.1 -0.5 -0.9 6 Unit V V V µA µA V V MHz pF VCE(sat) fT Cob VBE(sat) * * : Pulse Tester : Pulse Width≤300 ㎲, Duty Cycle≤2.0% KST-2041-002 2 SBT92 Electrical Characteristic Curves Fig. 1 hFE IC Fig. 2 VCE(sat),VBE(sat) - IC Fig. 3 fT - IC Fig. 4 Cob - VR KST-2041-002 3