SDB3101F

Semiconductor SDB3101F Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. SDB3101F Marking DB1 Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 3 1 2 0.9±0.1 PIN Connections 1. Anode 2. NC 3. Cathode 0~0.1 KSD-2065-000 1 SDB3101F Absolute maximum ratings Characteristic Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature Ta=25°C Symbol VR IFRM IF IFSM PD Tj Tstg * Ratings 30 0.5 0.2 2 150 150 -55 ~ 150 Unit V A A A mW °C °C * : δ = D/T =0.33 (T