Semiconductor
SDB3101
Schottky Barrier Diode
Features
• Low power rectified • Silicon epitaxial type • High reliability
Ordering Information
Type No. SDB3101 Marking DB1 Package Code SOT-23
Outline Dimensions
unit : mm
2.4±0.1 1.30±0.1
1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
2.9±0.1
3
1
0.2 Min.
2
1.12 Max.
KSD-2030-000
0.124
PIN Connections 1. Anode 2. NC 3. Cathode
0.38
0~0.1
-0.03 +0.05
1
SDB3101
Absolute maximum ratings
Characteristic
Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature
Ta=25°C
Symbol
VR IFRM IF IFSM PD Tj Tstg
*
Ratings
30 0.5 0.2 2 150 150 -55 ~ 150
Unit
V A A A mW °C °C
* : δ = D/T =0.33 (T
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