Semiconductor
SDB310WAF
Schottky Barrier Diode
Features
• Low power rectified • Silicon epitaxial type • High reliability
Ordering Information
Type No. SDB310WA Marking DB2 Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1
unit : mm
1
2.9±0.1 1.90 BSC
3
0.4±0.05
2
0.15±0.05
3
1
2
0.9±0.1
PIN Connections 1. Cathode 2. Cathode 3. Anode, Anode
0~0.1
KSD-2069-000
1
SDB310WAF
Absolute maximum ratings
Characteristic
Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature
Ta=25°C
Symbol
VR IFRM IF IFSM PD Tj Tstg
*
Ratings
30 0.5 0.2 2 150 150 -55 ~ 150
Unit
V A A A mW °C °C
* : δ = D/T =0.33 (T
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