Semiconductor
SDB310WK
Schottky Barrier Diode
Features
• Low power rectified • Silicon epitaxial type • High reliability
Ordering Information
Type No. SDB310WK Marking DB8 Package Code SOT-23
Outline Dimensions
unit : mm
2.4±0.1 1.30±0.1
1
1.90 Typ.
3 2
0.4 Typ.
2.9±0.1
3
0.45~0.60
0.2 Min.
1
2
1.12 Max.
0~0.1
KSD-2035-000
0.124
PIN Connections 1. Anode 2. Anode 3. Cathode, Cathode
0.38
-0.03 +0.05
1
SDB310WK
Absolute maximum ratings
Characteristic
Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature
Ta=25°C
Symbol
VR IFRM IF IFSM PD Tj Tstg
*
Ratings
30 0.5 0.2 2 150 150 -55 ~ 150
Unit
V A A A mW °C °C
* : δ = D/T =0.33 (T
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