Semiconductor
SDB310WKUF
Schottky Barrier Diode
Features
• Low power rectified • Silicon epitaxial type • High reliability
Ordering Information
Type No. SDB310WKUF Marking DB8 Package Code SOT-323F
Outline Dimensions
unit :
mm
2.1±0.1 0.30~0.40 1.30±0.1
1.30 BSC
2.0±0.1
1 3
0.70-0.15
3
2
0.11±0.05
+0.1
1
2
KSD-3035-000
0~0.1
PIN Connections 1. Anode 2. Anode 3. Cathode, Cathode
1
SDB310WKUF
Absolute maximum ratings
Characteristic
Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature
Ta=25°C
Symbol
VR IFRM* IF IFSM PD Tj Tstg
Ratings
30 0.5 0.2 2 150 150 -55 ~ 150
Unit
V A A A mW °C °C
* : δ = D/T =0.33 (T
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