SDB310WM

Semiconductor SDB310WM Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. SDB310WM Marking DB3 Package Code SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 1 1.90 Typ. 3 2 0.4 Typ. 2.9±0.1 3 0.45~0.60 0.2 Min. 1 2 1.12 Max. 0~0.1 KSD-2027-001 0.124 PIN Connections 1. Anode 2. Cathode 3. Cathode, Anode 0.38 -0.03 +0.05 1 SDB310WM Absolute maximum ratings Characteristic Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature Ta=25°C Symbol VR IFRM IF IFSM PD Tj Tstg * Ratings 30 0.5 0.2 2 150 150 -55 ~ 150 Unit V A A A mW °C °C * : δ = D/T =0.33 (T