SDB310WMU

Semiconductor SDB310WMU Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. SDB310WMU Marking DB3 Package Code SOT-323 Outline Dimensions 2.1±0.1 1.25±0.05 unit : mm 1 1.30±0.1 2.0±0.2 3 2 0.30±0.1 3 0.15±0.05 1 2 0.90±0.1 0.1 Min. 0~0.1 PIN Connections 1. Anode 2. Cathode 3. Cathode, Anode KSD-3033-000 1 SDB310WMU Absolute maximum ratings Characteristic Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature Ta=25°C Symbol VR IFRM* IF IFSM PD Tj Tstg Ratings 30 0.5 0.2 2 150 150 -55 ~ 150 Unit V A A A mW °C °C * : δ = D/T =0.33 (T