SDT05J

Semiconductor SDT05J TVS Diode Features • • • • Transient protection for data lines to IEC 61000-4-2(ESD) 15KV(air), 8KV(contact ) Small package for use in portable electronics Low operating and clamping voltage Protects five I/O lines Applications • Cellular Handsets and Accessories • Cordless phones • Notebooks, Handhelds and digital cameras Ordering Information Type NO. SDT05J Marking J05 Package Code SOT-363 Outline Dimensions unit : mm 2.1 BSC 1.25 BSC 6 5 4 1 2 0.15~0.30 6 1.30 BSC 5 4 3 2.0 BSC 1 2 3 0.25 Min. PIN Connections 1. Cathode 2. Anode 3. Cathode 4. Cathode 5. Cathode 6. Cathode 0.9±0.1 0~0.1 KSD-6003-001 0.1~0.25 1 SDT05J Absolute maximum ratings Characteristic Peak pulse power ( tp = 8/20 ㎲ ) Peak pulse current (tp = 8/20 ㎲ ) Operating temperature Storage temperature Ta=25°C Symbol PPK IPP TJ Tstg Ratings 200 12 -55 ~ 125 -55 ~ 150 Unit W A °C °C Electrical Characteristics Characteristic Reverse stand-off voltage Reverse breakdown voltage Reverse leakage current Clamping voltage Clamping voltage Junction capacitance Ta=25°C Symbol VRWM VBR IR VC VC CJ It=1mA Test Condition Min. Typ. Max. 5 6 10 9.5 12.5 150 Unit V V ㎂ V V pF VRWM=5V , T=25℃ IPP=1A, tp=8/20 ㎲ IPP=12A, tp=8/20 ㎲ Between I/O pins and Gnd VR=0V, f=1MHz KSD-6003-001 2 Electrical Characteristics Curves Fig. 1 None-repetitive peak pulse power vs pulse time Fig. 2 Power derating curve SDT05J Fig. 3 Pulse Waveform Fig. 4 Clamping voltage vs peak pulse current Fig. 5 Capacitance vs Reverse voltage KSD-6003-001 3