SDT05S

Semiconductor SDT05S TVS Diode Features • Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories • Microprocessor based equipment • Notebooks, Desktops and Servers Ordering Information Type NO. SDT05S Marking S05 Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 2.9±0.1 3 3 0.4 Typ. 2 1 2 0.2 Min. 1.12 Max. 0~0.1 0.38 KSD-2080-000 0.124 -0.03 +0.05 PIN Connections 1. Cathode 2. Cathode 3. Anode 1 SDT05S Absolute maximum ratings Characteristic Peak pulse power ( tp = 8/20 ㎲ ) Peak pulse current (tp = 8/20 ㎲ ) Lead soldering temperature Operating temperature Storage temperature Ta=25°C Symbol P PK IPP TL TJ Tstg Ratings 200 12 260 (10sec. ) -55 ~ 125 -55 ~ 150 Unit W A °C °C °C Electrical Characteristics Characteristic Reverse stand-off voltage Reverse breakdown voltage Reverse leakage current Clamping voltage Junction capacitance Junction capacitance Ta=25° C Symbol VRWM VBR IR VC CJ CJ It=1mA Test Condition Min. 6 Typ. Max. 5 Unit V V VRWM =5V , T=25℃ IPP =1A, tp=8/20 ㎲ Pin 1 to 2 VR=0V, f=1MHz Pin 1 to 3 and Pin 2 to 3 VR=0V, f=1MHz 20 9.8 100 150 ㎂ V pF pF KSD-2080-000 2 Electrical Characteristics Curves Fig. 1 Power derating curve SDT05S Fig. 2 None-repetitive peak pulse power vs pulse time Fig. 3 Pulse Waveform Fig. 4 Clamping voltage KSD-2080-000 3