SDT12S

Semiconductor SDT12S TVS Diode Features • Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories • Microprocessor based equipment • Notebooks, Desktops and Servers Ordering Information Type NO. SDT12S Marking S12 Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 2.9±0.1 3 3 0.4 Typ. 2 1 2 0.2 Min. 1.12 Max. 0~0.1 KSD-2078-000 0.124 PIN Connections 1. Cathode 2. Cathode 3. Anode 0.38 -0.03 +0.05 1 SDT12S Absolute maximum ratings Characteristic Peak pulse power ( tp = 8/20 ㎲ ) Peak pulse current (tp = 8/20 ㎲ ) Lead soldering temperature Operating temperature Storage temperature Ta=25°C Symbol PPK IPP TL TJ Tstg Ratings 300 12 260 (10sec. ) -55 ~ 125 -55 ~ 150 Unit W A °C °C °C Electrical Characteristics Characteristic Reverse stand-off voltage Reverse breakdown voltage Reverse leakage current Clamping voltage Junction capacitance Junction capacitance Ta=25°C Symbol VRWM VBR IR VC CJ CJ It=1mA Test Condition Min. Typ. Max. 12 13.3 1 19 120 150 Unit V V ㎂ V pF pF VRWM=12V , T=25℃ IPP=1A, tp=8/20 ㎲ Pin 1 to 2 VR=0V, f=1MHz Pin 1 to 3 and Pin 2 to 3 VR=0V, f=1MHz KSD-2078-000 2 Electrical Characteristics Curves Fig. 1 Power derating curve SDT12S Fig. 2 None-repetitive peak pulse power vs pulse time Fig. 3 Pulse Waveform Fig. 4 Clamping voltage vs peak pulse current Fig. 5 Forward voltage vs forward currnet KSD-2078-000 3