SDV251S

Semiconductor SDV251S Variable Capacitance Diode Features • High capacitance ratio in low voltage • Low series resistance (rS=0.6Ω Max.) Application • AFC, VCO application Ordering Information Type No. SDV251S Marking V7 Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 2.9±0.1 3 1 0.2 Min. 2 1.12 Max. KSD-2094-001 0.124 PIN Connections 1. Anode 2. NC 3. Cathode 0.38 0~0.1 -0.03 +0.05 1 SDV251S Absolute maximum ratings Characteristic Reverse voltage Junction temperature Storage temperature Ta=25°C Symbol VR Tj Tstg Ratings 12 150 -55 ~ 150 Unit V °C °C Electrical Characteristics Characteristic Reverse Voltage Reverse Current Diode Capacitance Capacitance Ratio Series resistance Ta=25°C Symbol VR IR C1.6V C5.0V n IR=10 ㎂ VR=9V Test Condition Min. Typ. Max. 12 23 11 1.7 2.0 200 38 19 2.2 0.6 Unit V ㎁ ㎊ Ω VR=1.6V, f=1MHz VR=5V, f=1MHz C1.6V / C5.0V VR=1V, f=50MHz rS KSD-2094-001 2 SDV251S ℃ ℃ KSD-2094-001 3