SI5312-HB

Semiconductor SI5312-H / SI5312-H(B) IRED Features • • • • Colorless transparency lens type φ5mm(T-13/4) all plastic mold type Low power consumption High radiant intensity Applications • Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Outline Dimensions unit : mm STRAIGHT TYPE STOPPER TYPE 4.8±0.2 4.8±0.2 9.0±0.2 9.0±0.2 1.2±0.2 1.2±0.2 3.8±0.5 0.5 23.0 MIN 0.5 23.0 MIN 1.0 MIN 2.54 NOM 1.0 MIN 2.54 NOM 1 2 5.8±0.2 1 2 5.8±0.2 PIN Connections 1.Anode 2.Cathode KLI-8003-001 1 SI5312-H / SI5312-H(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature * Soldering Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Tsol Ratings 150 100 1 4 -25～85 -30～100 260℃ for 5 seconds Unit mW mA A V ℃ ℃ *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical Characteristics Characteristic Forward Voltage Radiant Intensity Peak Wavelength Spectrum Bandwidth Reverse Current Symbol VF IE Test Condition IF= 50mA IF= 50mA IF= 50mA IF= 50mA VR=4V IF= 50mA Min. 30 - Typ. 1.3 70 950 50 ±8 Max. 1.7 10 - Unit V mW/Sr nm nm uA deg λP Δλ IR θ1/2 * Half angle 3 *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLI-8003-001 2 SI5312-H / SI5312-H(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IE - IF Forward Voltage VF [V] Radiant Intensity IE [mW/Sr] Forward Current IF [mA] Forward Current IF [mA] Fig. 3 IF – Ta Fig.4 Spectrum Distribution Forward Current IF [mA] Relative Intensity [%] Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram 100 50 0 50 100 Relative Radiant Intensity IE [%] KLI-8003-001 3