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SI5312-H_1

SI5312-H_1

  • 厂商:

    AUK(光电子)

  • 封装:

  • 描述:

    SI5312-H_1 - IRED - AUK corp

  • 详情介绍
  • 数据手册
  • 价格&库存
SI5312-H_1 数据手册
Semiconductor SI5312-H / SI5312-H(B) IRED Features • • • • Colorless transparency lens type φ5mm(T-13/4) all plastic mold type Low power consumption High radiant intensity Applications • Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Outline Dimensions unit : mm STRAIGHT TYPE 4.60~5.00 STOPPER TYPE : (B) 4.60~5.00 0.05 Typ. 8.80~9.20 0.05 Typ. 1.40 Max. 1.20 Min. 8.80~9.20 1.40 Max. 3.30~4.30 0.55 Max. 0.60 Max. 23.00 Min. 0.60 Max. 23.00 Min. 1.00 Min. 2.54 Typ. 1.00 Min. 2.54 Typ. 0.55 Max. 0.55 Max. 1 2 5.45~6.05 1 2 5.45~6.05 PIN Connections 1. Anode 2. Cathode KSD-O2P009-000 1 SI5312-H / SI5312-H(B) Absolute Maximum Ratings Characteristic Power dissipation Forward current * Peak forward current Reverse voltage Operating temperature range Storage temperature range 2 1 (Ta=25℃) Symbol PD IF IFP VR Topr Tstg Rating 145 100 1 4 -25∼85 -30∼100 Unit mW mA A V ℃ ℃ * Soldering temperature Tsol 260℃ for 10 seconds *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical / Optical Characteristics Characteristic Forward voltage Radiant intensity Peak wavelength Spectrum bandwidth Reverse current (Ta=25℃) Symbol VF IE Test Condition IF= 50mA IF= 50mA IF= 50mA IF= 50mA VR=4V IF= 50mA Min. 30 - Typ. 1.3 70 950 50 ±8 Max. 1.45 10 - Unit V mW/Sr nm nm uA deg λP ∆λ IR θ1/2 * Half angle 3 *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KSD-O2P009-000 2 SI5312-H / SI5312-H(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IE - IF Radiant Intensity IE [mW/Sr] Forward Current IF [mA] Forward Voltage VF [V] Forward Current IF [mA] Fig. 3 IF – Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Relative Intensity [%] Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram 100 50 0 50 100 Relative Radiant Intensity IE [%] KSD-O2P009-000 3 SI5312-H / SI5312-H(B) The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-O2P009-000 4
SI5312-H_1
物料型号: - SI5312-H/SI5312-H(B)

器件简介: - 该器件为无色透明透镜型φ5mm(T-13/4)全塑封型,具有低功耗和高辐射强度的特点。

引脚分配: - 1. 阳极(Anode) - 2. 阴极(Cathode)

参数特性: - 最大功耗:145mW - 正向电流:100mA - 峰值正向电流:1A(注:占空比为1/16,脉宽为0.1ms) - 反向电压:4V - 工作温度范围:-25~85°C - 存储温度范围:-30~100°C - 焊接温度:260°C持续10秒

功能详解: - 正向电压:在50mA电流下,范围为1.3V至1.45V - 辐射强度:在50mA电流下,最小为30mW/Sr,典型值为70mW/Sr - 峰值波长:950nm - 光谱带宽:50nm - 反向电流:在4V反向电压下,小于10uA - 半角(θ1/2):+8°(注:θ1/2是光强为峰值一半的离轴角)

应用信息: - 适用于红外遥控和自由空气传输系统,特别是与PIN光电二极管或光电晶体管结合使用时,要求低正向电压和舒适的辐射角。

封装信息: - 提供直插式和带止挡型(B)两种封装类型,具体尺寸见图示。
SI5312-H_1 价格&库存

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