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SI5313-CB

SI5313-CB

  • 厂商:

    AUK(光电子)

  • 封装:

  • 描述:

    SI5313-CB - IRED - AUK corp

  • 详情介绍
  • 数据手册
  • 价格&库存
SI5313-CB 数据手册
Semiconductor SI5313-C / SI5313-C(B) IRED Features • Colorless transparency lens type • φ5mm(T-13/4) all plastic mold type • Low power consumption Applications • Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Outline Dimensions unit : mm STRAIGHT TYPE STOPPER TYPE : (B) 4.80~5.20 4.80~5.20 0.05 Typ. 8.70~9.10 1.40 Max. 0.05 Typ. 8.70~9.10 1.40 Max. 1.20 Min. 2.20~3.20 0.60 Max. 23.00 Min. 0.05 Typ. 0.60 Max. 23.00 Min. 1.00 Min. 2.54 Typ. 2.54 Typ. 1.00 Min. 0.55 Max. 0.55 Max. 1 2 5.60~6.00 1 2 5.60~6.00 PIN Connections 1. Cathode 2. Anode KSD-O2Q001-000 1 SI5313-C / SI5313-C(B) Absolute Maximum Ratings Characteristic Power dissipation Forward current * Peak forward current Reverse voltage Operating temperature range Storage temperature range 2 1 (Ta=25℃) Symbol PD IF IFP VR Topr Tstg Rating 180 100 1 4 -25∼85 -30∼100 Unit mW mA A V ℃ ℃ * Soldering temperature Tsol 260℃ for 10 seconds *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical / Optical Characteristics Characteristic Forward voltage Radiant intensity Peak wavelength Spectrum bandwidth Reverse current (Ta=25℃) Symbol VF IE Test Condition IF= 50mA IF= 50mA IF= 50mA IF= 50mA VR=4V IF= 50mA Min. 10 - Typ. 1.5 20 880 50 ±30 Max. 1.8 10 - Unit V mW/Sr nm nm uA deg λP ∆λ IR θ1/2 * Half angle 3 *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KSD-O2Q001-000 2 SI5313-C / SI5313-C(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IE - IF Radiant Intensity IE [mW/Sr] Forward Current IF [mA] Forward Voltage VF [V] Forward Current IF [mA] Fig. 3 IF – Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Relative Intensity [%] Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Radiant Intensity IE [%] KSD-O2Q001-000 3 SI5313-C / SI5313-C(B) The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-O2Q001-000 4
SI5313-CB
物料型号: - 型号:SI5313-C/SI5313-C(B)

器件简介: - 该器件为无色透明透镜型φ5mm(T-13/4)全塑封模具型,具有低功耗特性。

引脚分配: - 引脚1:阴极(Cathode) - 引脚2:阳极(Anode)

参数特性: - 最大功耗:180mW - 正向电流:100mA - 峰值正向电流:1A(注:占空比为1/16,脉冲宽度为0.1ms) - 反向电压:4V - 工作温度范围:-25~85°C - 存储温度范围:-30~100°C - 焊接温度:260°C持续10秒(注:需保持IRED封装与PCB之间至少2.0mm的距离)

功能详解: - 正向电压:在50mA电流下,范围为1.5V至1.8V - 辐射强度:在50mA电流下,最小值为10mW/Sr,典型值为20mW/Sr - 峰值波长:在50mA电流下,典型值为880nm - 光谱带宽:在50mA电流下,典型值为50nm - 反向电流:在4V反向电压下,小于10uA - 半角(θ1/2):在50mA电流下,为+30°(注:θ1/2是光强降至峰值一半的离轴角)

应用信息: - 适用于红外遥控和自由空气传输系统,特别是与PIN光电二极管或光电晶体管结合使用时,要求低正向电压和舒适的辐射角。

封装信息: - 直插式封装,型号为(B)。
SI5313-CB 价格&库存

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