SI5315-DS

SI5315-DS/SI5315-DS(B) Semiconductor High Speed IRED Features • Colorless transparency lens type • φ5mm(T-13/4) all plastic mold type • Low power consumption • High power, High speed type Applications • Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Outline Dimensions STRAIGHT TYPE 5.0±0.2 unit : mm STOPPER TYPE 5.0±0.2 0.8±0.2 8.6±0.2 0.8±0.2 8.6±0.2 3.4±0.2 0.5 23.0 MIN 1.0 MIN 3.4±0.2 0.5 23.0 MIN 1.0 MIN 2.54NOM 2.54NOM 1 2 5.8 1 2 5.8 PIN Connections 1. Cathode 2. Anode KLI-0005-000 1 SI5315-DS/SI5315-DS(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Ratings 150 100 1 4 -25∼85 -30∼100 Unit mW mA A V ℃ ℃ 260℃ for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical Characteristics Characteristic Forward Voltage Radiant Intensity Peak Wavelength Spectrum Bandwidth Rise Time Reverse Current Symbol VF IE Test Condition IF= 50mA IF= 50mA IF= 50mA IF= 50mA IF= 50mA VR=4V IF= 50mA Min. 30 - Typ. 1.5 70 875 45 15 ±20 Max. 2.0 10 - Unit V mW/Sr nm nm ns uA deg λP Δλ tr IR θ /2 1 * Half angle 3 *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLI-0005-000 2 SI5315-DS / SI5315-DS(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IE - IF Forward Current IF [mA] Forward Voltage VF [V] Radiant Intensity IE [mW/Sr] Forward Current IF [mA] Fig. 3 IF – Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Ambient Temperature Ta [℃] Relative Intensity [%] Wavelength λ [nm] Fig. 5 Radiation Diagram Relative Radiant Intensity IE [%] KLI-0005-000 3