Semiconductor
SM5427-H / SM5427-H(B)
High Brightness LED Lamp
Features
• • • • • • Green colored transparency lens type φ5mm(T-13/4) all plastic mold type High efficiency led lamp High luminosity Flangeless package Low power consumption
Application
• Full color displays • Message boards
Outline Dimensions
unit :
mm
STRAIGHT TYPE
STOPPER TYPE
4.6±0.2
4.6±0.2
7.7±0.2
7.7±0.2
3.6±0.5 0.5 22.0 MIN 0.5 22.0 MIN
1.0 MIN 2.54 NOM 2.54 NOM
1.0 MIN
PIN Connections 1.Anode 2.Cathode
TENTATIVE
1
SM5427-H / SM5427-H(B)
Absolute maximum ratings
Characteristic
Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature
2 1
Symbol
PD IF IFP VR Topr Tstg
Ratings
110 30 50 4 -25∼85 -30∼100
Unit
mW mA mA V ℃ ℃
260℃ for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package
Electrical Characteristics
Characteristic
Forward Voltage Luminous Intensity Peak Wavelength Spectrum Bandwidth Reverse Current
Symbol
VF IV
Test Condition
IF= 20mA IF= 20mA IF= 20mA IF= 20mA VR=4V X Y IF= 20mA
Min.
68 -
Typ.
2.2 120 570 30 ±17 ±35
Max.
2.8 155 10 -
Unit
V mcd nm nm uA deg
λP Δλ IR
θ1/2
*3Half angle
*3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
TENTATIVE
2
SM5427-H / SM5427-H(B)
Characteristic Diagrams
Fig. 1 IF - VF Fig. 2 IV - IF
Forward Voltage VF [V]
Luminous Intensity Iv [mcd]
Forward Current IF [mA]
Forward
Current IF [mA]
Fig. 3 IF – Ta
Fig.4 Spectrum Distribution
Current IF [mA]
Forward
Ambient Temperature Ta [℃]
Relative Intensity [%]
Wavelength λ [nm]
Fig. 5-1 Radiation Diagram(X)
Fig. 5-2 Radiation Diagram(Y)
100
50
0
50
100
100
50
0
50
100
Relative Luminous Intensity Iv [%]
Relative Luminous Intensity Iv [%]
TENTATIVE
3
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