SPI5842-H

Semiconductor SPI5842-H Photo Diode Features • Peak sensitivity wavelength matching with infrared LED(λ =950nm) P • 4.8mm ×5.5mm side view package • Black colored visible light cut-off lens Application • Infrared remote controllers for TVs, VCRs, Audio equipment etc Outline Dimensions 4.8±0.2 3.65±0.2 1.75 unit : mm 5.55±0.2 5.6±0.2 0.6 18.0±1.0 Typ.0.5 2.54 ① ② PIN Connections 1. Anode 2.Cathode KPE-0001-000 1 SPI5842-H Absolute maximum ratings Characteristic Reverse Voltage Power Dissipation Operating Temperature Storage Temperature * Soldering Temperature 1 Symbol VR PD Topr Tstg Tsol Ratings 40 170 -20～70 -25～85 260℃ for 5 seconds Unit V mW ℃ ℃ *1. Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic * Short Circuit Current Dark Current Capacitance Spectral Sensitivity Peak Sensitivity Wavelength Half angle 1 Symbol ISC ID Ct Δ λ λ P θ /2 1 Test Condition Ee=6mW/㎠ VR=10V VR=10V, f=1MHz - Min - Typ 45 50 10 Max - Unit uA nA pF nm nm deg 840 ~ 1,050 940 ±55 *1. Ee : Irradiance by infrared LED light source(λ =940nm) p KPE-0001-000 2 Characteristic Diagrams Fig. 1 ISC - Ee 1000 SPI5842-H Fig. 2 ID - Ta 100 Short Current ISC [uA] Dark Current ID [nA] 10 100 1 0.1 10 3 0.3 1 10 100 0.01 20 0 20 60 Light Source [mW/㎠] Ambient Temperature Ta [℃] Fig. 3 Ct – VR 100 Fig.4 ID – VR 100 Dark Current ID [nA] 25 Capacitance [Pf] 80 10 60 1 40 0.1 20 00 5 10 15 20 0.01 0 4 8 12 16 20 Reverse Voltage [v] Reverse Voltage [v] Fig.5 Spectrum Sensitivity 100 Ambient Temperature Ta [℃] Relative Intensity [%] 80 60 40 20 0 600 700 800 900 1000 1100 Wavelength λ [nm] KPE-0001-000 3