SRA2201E

Semiconductor SRA2201E PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2201E Marking 1R Package Code SOT-523 Outline Dimensions 1.60±0.1. 0.80±0.1. unit : mm • Equivalent Circuit C(OUT) 1.00 BSC 1 3 0.2~0.3 B(IN) R1 1.60±0.1 2 R2 E(COMMON) 0.15 Min. 0.70±0.1 0~0.1 PIN Connections 1. Base 2. Emitter 3. Collector R1 4.7KΩ R2 4.7KΩ 0.1 Min. KSR-4025-000 1 SRA2201E Absolute maximum ratings Characteristic Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature (Ta=25°C) Symbol VO VI IO PD TJ TSTG Ratings -50 -20 -100 150 150 -55 ~ 150 Unit V V mA mW °C °C Electrical Characteristics Characteristic Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current (Ta=25°C) Symbol IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * Test Condition VO=-50V, VI=0 VO=-5V, IO=-10mA IO=-10mA, II=-0.5mA VO=-0.2V, IO=-5mA VO=-5V, IO=-0.1mA VO=-10V, IO=-5mA VI=-5V Min. Typ. Max. 30 -1.0 55 -0.1 -1.5 -1.2 200 -500 -0.3 -2.0 -1.8 Unit nA V V V MHz mA II * : Characteristic of Transistor Only KSR-4025-000 2 SRA2201E Electrical Characteristic Curves Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KSR-4025-000 3