SRA2211M

Semiconductor SRA2211M PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2211M Marking 2211 Package Code TO-92M Outline Dimensions 4.0±0.1 unit : ■ Equivalent Circuit 3.0±0.1 C(OUT) mm 0.44 REF 0.52 REF B(IN) 14.0±0.40 R1 R1 = 10KΩ E(COMMON) 1.27 Typ. 2.54 ± 0.1. 123 0.7 Typ. 3.0±0.1 3.8 Min. 0.42 Typ. PIN Connections 1. Emitter 2. Collector 3. Base KSR-I018-000 1 SRA2211M Absolute maximum ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings -50 -50 -5 -100 400 150 -55 ∼ 150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25°C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA - Min. Typ. Max. 120 -0.1 250 10 -500 -500 -0.3 - Unit nA nA V MHz KΩ R1 * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-I018-000 2