SRA2211UF

Semiconductor SRA2211UF PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2211UF Marking DR Package Code SOT-323F Outline Dimensions unit : ■ Equivalent Circuit 0.30~0.40 C(OUT) mm 2.1±0.1 1.30±0.1 1.30 BSC 2.0±0.1 1 3 0.70-0.15 2 B(IN) +0.1 R1 0.11±0.05 R1 = 10KΩ 0~0.1 E(COMMON) PIN Connections 1. Base 2. Emitter 3. Collector KSR-3032-000 1 SRA2211UF Absolute maximum ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings -50 -50 -5 -100 200 150 -55 ∼ 150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25°C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA - Min. Typ. Max. 120 -0.1 250 10 -500 -500 -0.3 - Unit nA nA V MHz KΩ R1 * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-3032-000 2