Semiconductor
SRC1201M
NPN Silicon Transistor
Descriptions
• Switching application • Interface circuit and driver circuit application
Features
• • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO. SRC1201M Marking 1201 Package Code TO-92M
Outline Dimensions
4.0±0.1
unit : mm
• Equivalent Circuit
3.0±0.1
0.44 REF 0.52 REF
C(OUT)
B(IN) 14.0±0.40
R1
R2
E(COMMON) 1.27 Typ. 2.54 ± 0.1. R1 4.7KΩ R2 4.7KΩ
1
2
3
0.7 Typ.
3.0±0.1 3.8 Min.
PIN Connections 1. Emitter 2. Collector 3. Base
0.42 Typ.
KSR-I001-000
1
SRC1201M
Absolute maximum ratings
Characteristic
Out Voltage Input Voltage Out Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25°C)
Symbol
VO VI IO PD TJ TSTG
Ratings
50 20 100 400 150 -55 ~ 150
Unit
V V mA mW °C °C
Electrical Characteristics
Characteristic
Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current
(Ta=25°C)
Symbol
IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT
*
Test Condition
VO=50V, VI=0 VO=5V, IO=10mA IO=10mA, II=0.5mA VO=0.2V, IO=5mA VO=5V, IO=0.1mA VO=10V, IO=5mA VI=5V
Min. Typ. Max.
30 1.0 55 0.1 1.5 1.2 200 500 0.3 2.0 1.8
Unit
nA V V V MHz mA
II
* : Characteristic of Transistor Only
KSR-I001-000
2
SRC1201M
Electrical Characteristic Curves
Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF)
Fig. 3 GI - IO
KSR-I001-000
3
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