STK58X60LM

Semiconductor STK58X60LM Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V(Min.) Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.7Ω(Max.) Type NO. STK58X60LM Marking STK58X60 Package Code MPT Ordering Information Outline Dimensions 7.30~7.50 unit : mm 1.20 Max. 1.70 Typ. 0.70 Max. 13.05~13.85 2.50 Typ. 0.60 Max. 2.50 Typ. 1 2 3 0.60 Max. 8.40~8.60 3.30~3.50 1.95~2.05 PIN Connections 1. Gate 2. Drain 3. Source KSD-T0H016-000 1 STK58X60LM Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Ta=25°C) Symbol VDSS VGSS ID IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 0.58 2.4 1.3 0.6 3.9 0.6 110 150 -55~150 Unit V V A A W A mJ A μJ °C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Rth(J-a) Typ. - Max 96.2 Unit ℃/W Junction-ambient KSD-T0H016-000 2 STK58X60LM Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ (Ta=25°C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250μA, VGS=0 ID=250μA, VDS= VGS VDS=600V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=0.29A VDS=10V, ID=0.29A VGS=0V, VDS=25V, f=1MHz Min. 600 2.0 - Typ. 3.8 2.3 290 33 6.0 22 10.5 7 10.5 8.4 1.4 2.6 Max. 4.0 1 ±100 4.7 435 49 9.0 12.6 2.1 3.9 Unit V V μA nA Ω S pF VDD=300V, VGS=10V ID=0.58A, RG=25Ω - ③④ - ns VDD=300V, VGS=10V ID=0.58A - nC ③④ - Source-Drain Diode Ratings and Characteristics Characteristic Continuous source current Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④ (Ta=25°C) Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=0.29A Is=0.58A, VGS=0V dis/dt=100A/us Min - Typ 230 0.84 Max 0.6 2.4 1.4 - Unit A V ns uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=20mH, IAS=0.58A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T0H016-000 3 STK58X60LM Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD ℃ Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ KSD-T0H016-000 4 STK58X60LM Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ ㅋ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area ` * KSD-T0H016-000 5 STK58X60LM Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0H016-000 6 STK58X60LM Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0H016-000 7 STK58X60LM The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0H016-000 8