STK7000

Semiconductor STK7000 N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switch • High saturation current capability. Ordering Information Type NO. STK7000 Marking STK7000 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 unit : mm 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 123 PIN Connections 1. Source 2. Gate 3. Drain 0.38 1.20±0.1 KST-9078-003 1 STK7000 Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power dissipation Maximum Junction-to-Ambient Operating Junction and Storage temperature range (Ta=25° C) Symbol VDSS VGS ID IDM PD RthJA T J , T stg Ratings 60 ±20 200 500 400 312.5 -55~150 Unit V V mA mA mW °C/W °C Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage On-state drain current * Drain-Source on-resistance * Drain-Source on-resistance * Forward transconductance * Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Ta=25° C) Symbol BVDSS VGS(t h) IDSS IGSS ID(on) RDS(ON) RDS(ON) g fs C iss C oss C rss tON tOFF Test Condition ID =10µA, VGS =0 ID =1mA, V DS =VGS VDS =48V, V GS =0 VDS =0V, VGS =± 15V VDS =10V, V GS =4.5V VGS =4.5V, ID =0.075A VGS =10V, I D =0.5A TJ =125℃ VDS =10V, I D =0.2A VDS =25V, V GS =0, f=1MHz VDS =25V, V GS =0, f=1MHz VDS =25V, V GS =0, f=1MHz VDD=15V, ID =0.5A VGEN =10V, RG =25Ω VDD=15V, ID =0.5A VGEN =10V, RG =25Ω Min. 60 0.8 75 100 - Typ. 2.1 350 4.5 2.4 4.4 22 11 2 - Max. 3.0 1 ± 100 5.3 5.0 9.0 60 25 5 10 10 Unit V V µA nA mA Ω Ω Ω mS pF pF pF ns ns *. Pulse test : Pulse width≤300us, Duty cycle ≤ 2.0% KST-9078-003 2 STK7000 Electrical Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS Fig. 3 RDS( on) - ID Fig. 4 C - VD S Fig. 5 VGS - Qg Fig. 6 RDS(on) - TJ KST-9078-003 3 STK7000 Fig. 7 RDS( on) - VGS Fig. 8 IS - V SD Fig. 9 VGS( th) - TJ Fig. 1 ID - VDS µ KST-9078-003 4