Semiconductor
STK7002
N-Channel Enhancement-Mode MOSFET
Description
• High speed switching application.
Features
• High density cell design for low RDS(ON). • Voltage controlled small signal switch • High saturation current capability.
Ordering Information
Type NO. STK7002 Marking K702 Package Code SOT-23
Outline Dimensions
unit : mm
2.4±0.1 1.30±0.1
1
1.90 Typ. 2.9±0.1
3
0.4 Typ. 0.2 Min.
2
1.12 Max.
0~0.1
0.38
PIN Connections 1. Gate 2. Source 3. Drain
KST-2105-003
0.124
-0.03 +0.05
1
STK7002
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power dissipation Maximum Junction-to-Ambient Operating Junction and Storage temperature range
(Ta=25° C)
Symbol
VDSS VGS ID IDM PD RthJA T J , T stg
Ratings
60 ±20 115 800 200 625 -55~150
Unit
V V mA mA mW °C/W °C
Electrical Characteristics
Characteristic
Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage On-state drain current
(Ta=25° C)
Symbol
BVDSS VGS(t h) IDSS IGSS ID(on)
Test Condition
ID =10µA, VGS =0 ID =0.25mA, VDS =V GS VDS =60V, V GS =0 VDS =0V, VGS =± 20V VDS =7.5V, VGS =10V VGS =5V, ID =0.05A Tc=125℃ VGS =10V, I D =0.5A Tc=125℃ VDS =10V, I D =0.2A VDS =25V, V GS =0, f=1MHz
Min.
60 1 500 -
Typ.
2.0 1000 3.2 5.8
Max.
2.5 1 ± 100 7.5 13.5 7.5 13.5 50 25 5 20 20
Unit
V V µA nA mA
Drain-Source on-resistance
RDS(ON)
80 -
2.4 4.4 22 11 2 7 11
Ω
Forward transconductance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time
g fs C iss C oss C rss tON tOFF
mS
pF
VDD=30V, ID =0.2A VGEN =10V, RG =25Ω
-
ns ns
KST-2105-003
2
STK7002
Electrical Characteristic Curves
Fig. 1 ID - VDS Fig. 2 ID - VGS
Fig. 3 rDS(on) - ID
Fig. 4 C - VD S
Fig. 5 VGS - Qg
Fig. 6 rDS(on) - TJ
KST-2105-003
3
STK7002
Fig. 7 rDS(on) - VGS Fig. 8 IS - V SD
Fig. 9 VGS( th) - TJ
µ
KST-2105-003
4
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