STK830FC

Semiconductor STK830FC Advanced Power MOSFET Features • Avalanche rugged technology. • • • • Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max.) @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. STK830FC Marking STK830 Package Code TO-220F-3SL Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H017-000 1 STK830FC Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current (Tc=25℃) Continuous Drain current (Tc=100℃) Drain Current-Pulsed Power Dissipation (Tc=25℃) Linear Derating Factor Single Pulsed Avalanche Energy Avalanche current Repetitive Avalanche Energy ① Symbol VDSS VGS ID ID IDM PD ② ① ① EAS IAR EAR dv/dt TJ , Tstg TL Rating 500 ±30 4.5 2.9 * * Unit V V A A A W W/℃ mJ A mJ V/ns °C °C 18 38 0.3 270 4.5 7.3 5.5 -55~150 300 Peak Diode Recovery dv/dt Operating Junction and Storage temperature range Maximum lead temp. for soldering Purpose, 1/8” from case for 5-seconds * Limited by Maximum junction Temperature Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Symbol Rθ JC Rθ CS Rθ JA Typ. 0.5 Max 3.31 Units ℃/W 62.5 KST-H017-000 2 STK830FC Electrical Characteristics (Tc=25°C unless otherwise specified) Characteristic Drain-Source breakdown voltage Gate-Threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain(“Miller”)charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250µA, VGS=0 ID=250µA, VDS=5V VDS=500V VDS=0V, VGS=±30V VGS=10V, ID=2.25A VDS=50V, ID=2.25A VGS=0V, VDS=25V, f=1MHz Min. 500 2.0 Typ. Max. 4.0 10 ±100 1.5 Unit V V µA nA Ω S 3.87 760 85 15 15 900 100 22 40 40 140 55 43 pF VDD=250V,ID=4.5A RG=12Ω ④⑤ 16 66 22 ns VDS=400V,VGS=10V, ID=4.5A ④⑤ 33 4.4 16.6 nC Source-Drain Diode Ratings and Characteristics Characteristic Continuous source current Pulsed-source current Diode forward voltage Reverse recovery time Reverse recovery charge ① ④ Symbol IS ISM VSD trr Qrr Test Condition Integral reverse pn-diode in the MOSFET TJ=25℃, VGS=0V, IS=4.5A TJ=25℃,IF=4.5A diF/dt=100A/us Min Typ Max 4.5 18 1.4 Units A V ns uC 285 ④ 2.0 Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=30mH, IAS=4.5A, VDD=50V, RG=27Ω , starting TJ=25℃ ③ ISD ≤ 4.5A, di/dt≤ 130A/us, VDD≤ BVDSS, starting TJ=25℃ ④ Pulse Test : Pulse Width=250us, Duty cycle≤ 2% ⑤ Essentially independent of operating temperature KST-H017-000 3 STK830FC Electrical Characteristic Curves Fig. 1 ID - VDS V T o p: GS Fig. 2 ID - VGS 15V 10V 8V 7V 6V 5.5 V 5V B u tt o m : 4 . 5 V N ote: 1.2 5 0 u s P uls e Test 2.TC= 25 C ° Fig. 3 RDS(on) - ID Fig. 4 IDR - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG = KST-H017-000 4 STK830FC Fig. 7 BVDSS - TJ Fig. 8 RDS(on) - TJ C C Fig. 9 ID - TC Fig. 10 Safe operating Area Fig. 11 Thermal Response C * ΘC KST-H017-000 5 STK830FC Fig. 12 Gate Charge Test Circuit & Waveform Fig. 13 Resistive Switching Test Circuit & Waveform Fig. 14 Unclamped Inductive Switching Test Circuit & Waveform KST-H017-000 6 STK830FC Fig. 15 Peak Diode Recovery dv/dt Test Circuit & Waveform KST-H017-000 7 STK830FC These AUK products are intended for usage in general electronic equipments(Office and communication equipment, measuring equipment, domestic electrification, etc.). Please make sure that you consult with us before you use these AUK products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic signal, combustion central, all types of safety device, etc.). AUK cannot accept liability to any damage which may occur in case these AUK products were used in the mentioned equipments without prior consultation with AUK. KST-H017-000 8