Semiconductor
STN2222
NPN Silicon Transistor
Descriptions
• General purpose application • Switching application
Features
• Large collector current • Low collector saturation voltage • Complementary pair with STN2907
Ordering Information
Type NO. STN2222 Marking STN2222 Package Code TO-92
Outline Dimensions
3.45±0.1 4.5±0.1 2.25±0.1
unit : mm
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
1.27 Typ. 2.54 Typ.
123
PIN Connections 1. Emitter 2. Base 3. Collector
1.20±0.1
0.38
KST-9061-001
1
STN2222
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
60 30 5 600 625 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob
Test Condition
IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=10V, IC=10mA IC=150mA, IB=15mA VCE=20V, IC=20mA VCB=10V, IE=0, f=1MHz
Min. Typ. Max.
60 30 5 75 250 6.0 10 0.4 -
Unit
V V V nA V MHz pF
KST-9061-001
2
STN2222
Electrical Characteristic Curves
Fig. 1 PC-Ta Fig. 2 IC-VBE
10V
Fig. 3 IC-VCE
Fig. 4 VCE(sat)-IC
Fig. 5 hFE-IC
Fig. 6 hFE-IC
10V
KST-9061-001
3
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