STN2222AS

Semiconductor STN2222AS NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Large collector current • Low collector saturation voltage • Complementary pair with STN2907AS Ordering Information Type NO. STN2222AS Marking XA Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 0.38 0~0.1 -0.03 +0.05 2.9±0.1 PIN Connections 1. Base 2. Emitter 3. Collector KST-2057-001 0.124 1 STN2222AS Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature * : Package mounted on 99.5% Alumina 10×8×0.1 (Ta=25°C) Symbol VCBO VCEO VEBO IC PC * Ratings 60 40 5 600 350 150 -55~150 Unit V V V mA mW °C °C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob Test Condition IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=10V, IC=10mA IC=150mA, IB=15mA VCE=20V, IC=20mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 60 40 5 75 250 6.0 0.4 10 Unit V V V nA V MHz pF KST-2057-001 2 STN2222AS Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC Fig. 5 hFE - IC KST-2057-001 3