STS8050

Semiconductor STS8050 NPN Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8550 Ordering Information Type NO. STS8050 Marking STS8050 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 123 1.20±0.1 0.38 PIN Connections 1. Emitter 2. Base 3. Collector KST-9012-000 1 STS8050 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 25 6 800 -800 625 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO ICBO h * FE Test Condition IC=500µA, IE=0 IC=1mA, IB=0 VCB=15V, IE=0 VCE=1V, IC=50mA IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 30 25 85 120 19 50 300 0.5 1.2 - Unit V V nA V V MHz pF VCE(sat) VBE fT Cob * : hFE Rank / B : 85~160, C : 120~200, D : 160~300 KST-9012-000 2 STS8050 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC Fig. 5 hFE - IC KST-9012-000 3