STS8550

Semiconductor STS8550 PNP Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8050 Ordering Information Type NO. STS8550 Marking STS8550 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 123 1.20±0.1 0.38 PIN Connections 1. Emitter 2. Base 3. Collector KST-9013-000 1 STS8550 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings -30 -25 -6 -800 800 625 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO ICBO h * FE Test Condition IC=-500µA, IE=0 IC=-1mA, IB=0 VCB=-15V, IE=0 VCE=-1V, IC=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-500mA VCE=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -30 -25 85 120 19 -50 300 -0.5 -1.2 - Unit V V nA V V MHz pF VCE(sat) VBE fT Cob * : hFE Rank / B : 85~160, C : 120~200, D : 160~300 KST-9013-000 2 STS8550 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC Fig. 5 hFE - IC Fig. 6 hFE - IC KST-9013-000 3