TBN4226

Semiconductor TBN4226 Series Si NPN Transistor SOT-323 Unit in mm 2.1±0.1 1.25±0.05 □ Applications - VHF and UHF low noise amplifier - Wide band amplifier 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min. □ Features - High gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 7 mA fT = 8 GHz at VCE = 3 V, IC = 30 mA - High power gain - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz |S21|2 = 9.0 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz 0.90±0.1 Pin Configuration 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 8 3 100 150 150 -65 ~ 150 Unit V V V mA mW ℃ ℃ Caution : Electro Static Discharge sensitive device 0~0.1 0.15±0.05 1 TBN4226 Series □ Electrical Characteristics (TA = 25 ℃) Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT |S21|2 NF Cre Test Conditions VCB = 15 V, IE = 0 mA VEB = 2 V, IC = 0 mA VCE = 3 V, IC = 7 mA VCE = 3 V, IC = 7 mA VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz Min. 70 4.0 7.0 Typ. 100 6.0 9.0 1.2 0.9 Max. 0.5 0.5 250 2.0 1.4 GHz dB dB pF Unit ㎂ ㎂ □ hFE Classification Marking hFE Value SM2 70 - 140 SM1 125 - 250 □ Available Package Product TBN4226S TBN4226U TBN4226E TBN4226KF Package SOT-23 SOT-323 SOT-523 SOT-623F Unit in mm Dimension 2.9 ⅹ 1.3, 1.2t 2.0 ⅹ 1.25, 1.0t 1.6 ⅹ 0.8, 0.8t 1.4 ⅹ 0.8, 0.6t 2 TBN4226 Series □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Total Power Dissipation vs. Ambient Temperature Reverse Transfer Capacitance, Cre (pF) 250 Reverse Transfer Capacitance vs. Collector to Base Voltage 1.4 Total Power Dissipation, Ptot (mW) Free Air 200 f = 1 MHz 1.2 150 1.0 100 0.8 50 0.6 0 0 25 50 75 100 o 125 150 0.4 0 2 4 6 8 10 12 Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 200 VCE = 3 V 150 Collector Current vs. Base to Emitter Voltage 30 25 VCE = 3 V Collector Current, IC (mA) 1 10 100 DC Current Gain, hFE 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 100 50 0 0.1 Collector Current, IC (mA) Base to Emitter Voltage, VBE (V) 3 TBN4226 Series Collector Current vs. Collector to Emitter Voltage 80 IB Step = 100 µA 14 Gain Bandwidth Product vs. Collector Current VCE = 3 V Gain Bandwidth Product, fT (GHz) 70 12 10 8 6 4 2 0 Collector Current, IC (mA) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 1 10 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) Insertion Power Gain vs. Frequency 30 25 20 15 10 5 0 0.1 Insertion Power Gain vs. Collector Current 16 Insertion Power Gain, |S21| (dB) Insertion Power Gain, |S21| (dB) VCE = 3 V IC = 7 m A 14 12 10 8 6 4 2 0 1 VCE = 3 V f = 1 GHz 2 1 Frequency (GHz) 10 2 10 100 Collector Current, IC (mA) 4 TBN4226 Series Maximum Available Gain vs. Collector Current 20 Noise Figure vs. Collector Current 6 Maximum Available Gain, MAG (dB) 18 16 14 12 10 8 6 4 2 0 1 VCE = 3 V f = 1GHz 5 VCE = 3 V f = 1 GHz Noise Figure, NF (dB) 10 100 4 3 2 1 0 0.1 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) Noise Parameter vs. Frequency Frequency (GHz) 0.9 1.0 1.5 2.0 Fmin (dB) 1.27 1.16 1.79 1.91 rn 0.11 0.09 0.08 0.11 Γopt Mag 0.290 0.301 0.436 0.543 Phase 144.4 141.3 -162.9 -143.2 Association gain (dB) 11.58 10.60 8.13 6.45 Gmax (dB) 12.98 11.83 8.57 6.89 5 TBN4226 Series □ Dimensions of TBN4226S in mm SOT -23 □ Dimensions of TBN4226E in mm SOT-523 □ Dimensions of TBN4226KF in mm SOT-623F 1.2 0.8 Pin Configuration (SOT-23, SOT-523, SOT-623F) Pin No. 1 2 Symbol B E C Description Base Emitter Collector 1 1.4 0.9 3 3 0.2 0.11 2 0.6 0~0.1 6