TBN6301E

Semiconductor TBN6301 Series Si NPN Transistor SOT-323 Unit in mm 2.1±0.1 1.25±0.05 □ Applications - VHF and UHF wide band amplifier 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min. □ Features - High gain bandwidth product fT = 6 GHz at VCE = 3 V, IC = 10 mA fT = 7.5 GHz at VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz 0.90±0.1 Pin Configuration 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 8 3 75 150 150 -65 ~ 150 Unit V V V mA mW ℃ ℃ Caution : Electro Static Discharge sensitive device 0~0.1 0.15±0.05 1 TBN6301 Series □ Electrical Characteristics (TA = 25 ℃) Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Gain Bandwidth Product IEBO hFE fT Test Conditions VCB = 15 V, IE = 0 mA VCE = 8 V, IB = 0 mA VEB = 2 V, IC = 0 mA VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 10 mA VCE = 5 V, IC = 20 mA Insertion Power Gain |S21|2 VCE = 3 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 20 mA, f = 1 GHz Noise Figure Reverse Transfer Capacitance NF Cre VCE = 3 V, IC = 10 mA, f = 1 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz 80 5 6 7 7 6 7.5 9 9.5 1.4 1.1 1.8 pF Min. Typ. Max. 0.5 10 0.5 250 GHz GHz dB dB Unit ㎂ ㎂ ㎂ □ hFE Classification Marking hFE Value SB2 80 - 160 SB1 125 - 250 □ Available Package Product TBN6301U TBN6301E Package SOT-323 SOT-523 Unit in mm Dimension 2.0 ⅹ 1.25, 1.0t 1.6 ⅹ 0.8, 0.8t 2 TBN6301 Series □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Power Dissipation vs. Ambient Temperature 200 Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance, Cre (pF) 1.4 f = 1 MHz Collector Power Dissipation, PC (mW) 150 1.2 100 1.0 50 0 0 25 50 75 100 o 125 150 0.8 0 1 2 3 4 5 6 7 Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 400 350 300 VCE = 3 V 30 25 20 15 10 5 Collector Current vs. Base to Emitter Voltage VCE = 3 V 250 200 150 100 50 0 0.1 Collector Current, IC (mA) 1 10 100 DC Current Gain, hFE 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector Current, IC (mA) Base to Emitter Voltage, VBE (V) 3 TBN6301 Series Base Current, Collector Current vs. Base to Emitter Voltage Base Current, IB or Collector Current, IC (A) 10 10 10 10 10 10 10 10 10 0 Collector Current vs. Collector to Emitter Voltage 70 IB Step = 50 µA -1 -2 Collector Current, IC (mA) VCE = 3 V 60 50 40 30 20 10 -3 -4 -5 -6 -7 -8 10 -9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0 1 2 3 4 5 6 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) Gain Bandwidth Product vs. Collector Current 14 30 Insertion Power Gain vs. Frequency VCE = 3 V IC = 10 mA Gain Bandwidth Product, fT (GHz) 12 10 8 6 4 2 0 1 Insertion Power Gain, |S21| (dB) VCE = 3 V VCE = 5 V VCE = 7 V 25 20 15 10 5 0 0.1 2 10 100 1 Collector Current, IC (mA) Frequency (GHz) 4 TBN6301 Series Insertion Power Gain vs. Collector Current 16 20 Maximum Available Gain vs. Collector Current Maximum Available Gain, MAG (dB) VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz Insertion Power Gain, |S21| (dB) 14 12 10 8 6 4 2 0 1 VCE = 3 V VCE = 5 V VCE = 7 V f = 1 GHz 2 15 10 5 0 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) 5 TBN6301 Series □ Dimensions of TBN6301E in mm SOT-523 Pin Configuration Pin No. 1 2 3 Symbol B E C Description Base Emitter Collector 6