TBN6501U

Semiconductor TBN6501U Si NPN Transistor SOT-323 Unit in mm 2.1±0.1 1.25±0.05 □ Applications - Broadband amplifier application under 1GHz - SAW filter driver in TV tuners 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min. □ Features - Gain bandwidth product fT = 1.1 GHz at VCE = 3 V, IC = 20 mA fT = 1.5 GHz at VCE = 5 V, IC = 30 mA - Power gain |S21|2 = 3.0 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Noise figure NF = 1.8 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz 0.90±0.1 Pin Configuration 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 20 8 3 100 200 150 -65 ~ 150 Unit V V V mA mW ℃ ℃ Caution : Electro Static Discharge sensitive device 0~0.1 0.15±0.05 1 TBN6501U □ Electrical Characteristics (TA = 25 ℃) Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Gain Bandwidth Product IEBO hFE fT Test Conditions VCB = 15 V, IE = 0 mA VCE = 8 V, IB = 0 mA VEB = 2 V, IC = 0 mA VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 20 mA VCE = 5 V, IC = 30 mA Insertion Power Gain |S21|2 VCE = 3 V, IC = 20 mA, f = 1 GHz VCE = 5 V, IC = 30 mA, f = 1 GHz Noise Figure Reverse Transfer Capacitance NF Cre VCE = 3 V, IC = 10 mA, f = 1 GHz VCB = 3 V, IE = 0 mA, f = 1 MHz Min. 50 0.9 1.3 Typ. 1.1 1.5 3.0 4.0 1.8 2.0 Max. 0.5 10 0.5 250 pF GHz GHz dB dB Unit ㎂ ㎂ ㎂ □ hFE Classification Marking hFE Value SD2 80 - 160 SD1 125 - 250 2 TBN6501U □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Power Dissipation vs. Ambient Temperature 300 3.0 Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance, Cre (pF) 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 f = 1 MHz Power Dissipation, PC (mW) 250 200 150 100 50 0 0 25 50 75 100 o 125 150 1 2 3 4 5 6 7 Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 300 VCE = 3 V 250 Collector Current vs. Base to Emitter Voltage 30 25 VCE = 3 V Collector Current, IC [mA] 1 10 100 DC Current Gain, hFE 200 150 100 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 50 0 0.1 Collector Current, IC (mA) Base to Emitter Voltage, VBE [V] 3 TBN6501U Collector Current vs. Collector to Emitter Voltage 50 Gain Bandwidth Product vs. Collector Current 3.0 Gain Bandwidth Product, fT (GHz) 45 IB Step = 50 µA Collector Current, IC (mA) 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 2.5 2.0 1.5 1.0 0.5 0.0 10 V CE = 3 V V CE = 5 V 20 30 40 50 60 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) Insertion Power Gain vs. Collector Current 6 9 Maximum Available Gain vs. Collector Current Maximum Available Gain, MAG (dB) Insertion Power Gain, |S21| (dB) 5 VCE = 3 V VCE = 5 V f = 1 GHz 8 7 6 5 4 3 2 1 0 10 VCE = 3 V VCE = 5 V f = 1 GHz 2 4 3 2 1 0 10 100 100 Collector Current, IC (mA) Collector Current, IC (mA) 4