AS28C010F-15

EEPROM E EPROM Austin Semiconductor, Inc. 128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-38267 MIL-PRF-38535 AS28C010 PIN ASSIGNMENT (Top View) 32-Pin CFP (F), 32-Pin CerDIP (CW) NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc WE\ NC A14 A13 A8 A9 A11 OE\ A10 CE\ I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 FEATURES Access speed: 120, 150, 200, and 250ns Data Retention: 100 Years Low power, active current: 50mA, standby current: 500uA Single +5V (+10%) power supply Data Polling and Toggle Erase/Write Endurance (10,000 byte mode / 100,000 page mode) Software Data protection Algorithm Automatic , Self-Timed Byte Write Automatic Programming: Automatic Page Write: 10ms (MAX) OPTIONS MARKINGS -12 -15 -20 -25 F CW XT IT 883C Timing 120ns access 150ns access 200ns access 250ns access Packages Ceramic Flat Pack CerDIP, 600 mil Operating Temperature Ranges -Military (-55oC to +125oC) -Industrial (-40oC to +85oC) -Full Military Class M Processing *NOTE: Package lid is connected to ground (Vss). GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. The AS28C010 achieves high speed access, low power consumption, and a high level of reliability by employing advanced CMOS process and circuitry technology. This device has a 256-Byte Page Programming function to make its erase and write operations faster. The AS28C010 features Data Polling and a toggle signal to indicate completion of erase and programming operations. This EEPROM provides several levels of data protection., in AS28C010 Rev. 1.5 5/06 addition to noise protection on the WE signal and write inhibit during power on and off. Software data protection is implemented using JEDEC Optional Standard algorithm. The AS28C010 is designed for high reliability in the most demanding applications. Data retention is specified for 100 years and erase/write endurance is guaranteed to a minimum of 100,000 cycles in the Page Mode and 10,000 cycles in the Byte Mode. For more products and information please visit our web site at www.austinsemiconductor.com Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 EEPROM E EPROM Austin Semiconductor, Inc. AS28C010 FUNCTIONAL BLOCK DIAGRAM AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 EEPROM E EPROM Austin Semiconductor, Inc. FUNCTIONAL DESCRIPTION READ Read operations are initiated by both OE\ and CE\ LOW. The read operation is terminated by either CE\ or OE\ returning HIGH. This two line control architecture eliminates bus contention in a system environment. The data bus will be in a high impedance state when either OE\ or CE\ is HIGH. Figure 1: Status Bit Assignment I/O DP TB 5 4 3 2 1 0 AS28C010 RESERVED TOGGLE BIT DATA\ POLLING DATA\ POLLING The AS28C010 features DATA\ Polling as a method to indicate to the host system that the byte write or page write cycle has completed. DATA\ Polling allows a simple bit test operation to determine the status of the AS28C010, eliminating additional interrupt inputs or external hardware. During the internal programming cycle, any attempt to read the last byte written will produce the complement of that data on I/O7 (i.e., write data = 0xxx xxxx, read data = 1xxx xxxx). Once the programming cycle is complete, I/O7 will reflect true data. Note: If the AS28C010 is in the protected state and an illegal write operation is attempted DATA\ Polling will not operate. WRITE Write operations are initiated when both CE\ and WE\ are LOW and OE\ is HIGH. The AS28C010 supports both a CE\ and WE\ controlled write cycle. That is, the address is latched by the falling edge of either CE\ or WE\, whichever occurs last. Similarly, the data is latched internally by the rising edge of either CE\ or WE\, whichever occurs first. A byte write operation, once initiated, will automatically continue to completion, typically within 5ms. PAGE WRITE The page write feature of the AS28C010 allows the entire memory to be written in 5 seconds. Page write allows two to two hundred fifty-six bytes of data to be consecutively written to the AS28C010 prior to the commencement of the internal programming cycle. The host can fetch data from another device within the system during a page write operation (change the source address), but the page address (A8 through A16) for each subsequent valid write cycle to the part during this operation must be the same as the initial page address. The page write mode can be initiated during any write operation. Following the initial byte write cycle, the host can write an additional one to two hundred fifty six bytes in the same manner as the first byte was written. Each successive byte load cycle, started by the WE\ HIGH to LOW transition, must begin within 100µs of the falling edge of the preceding WE\. If a subsequent WE\ HIGH to LOW transition is not detected within 100µs, the internal automatic programming cycle will commence. There is no page write window limitation. Effectively the page write window is infinitely wide, so long as the host continues to access the device within the byte load cycle time of 100µs. TOGGLE BIT The AS28C010 also provides another method for determining when the internal write cycle is complete. During the internal programming cycle, I/O6 will toggle from HIGH to LOW and LOW to HIGH on subsequent attempts to read the device. When the internal cycle is complete the toggling will cease and the device will be accessible for additional read or write operations. WRITE The AS28C010 provides the user two write operation status bits. These can be used to optimize a system write cycle time. The status bits are mapped onto the I/O bus as shown in Figure 1. AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 EEPROM E EPROM Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V1 Voltage on any pin Relative to Vss.......................-0.6V to +7.0V1 Storage Temperature ............................................-65°C to +150°C Operating Temperature Range.............................-55oC to +125oC Soldering Temperature Range...............................................260oC Maximum Junction Temperature**....................................+150°C Power Dissipation...................................................................1.0W AS28C010 *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < 125oC; Vcc = 5V +10%) PARAMETER 1 Input High (Logic 1) Voltage 1 Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage CONDITION SYMBOL VIH VIL ILI ILO VOH VOL MIN 2.0 -1.0 MAX VCC + 1.0V 0.8 10 10 0.4 UNITS V V VIN = V SS to VCC VOUT =VSS to Vcc, CE\=V IH IOH = -400 A IOL = 2.1 mA 2.4 V V Notes: 1) VIL min. and V IH max. are for reference only and are not tested. PARAMETER Power Supply Current: Operating CONDITIONS IOUT =OmA, Vcc = 5.5V Cycle=MIN SYM ICC3 -12 100 MAX -15 -20 100 80 -25 80 UNITS NOTES mA CE\=Vcc, Vcc = 5.5V Power Supply Current: Standby CE\=VIH, Vcc = 5.5V ICC1 500 500 500 500 A ICC2 3 3 3 3 mA AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 EEPROM E EPROM Austin Semiconductor, Inc. CAPACITANCE TA=+25oC, f= 1MHZ, VCC=5V PARAMETER Input Capacitance Input / Output Capactiance SYMBOL CIN(2) CI/O(2) MAX 10 10 UNITS pF pF Test Conditions VIN=0V VI/O=0V AS28C010 POWER-UP TIMING Symbol tPUR (2) tPUW (2) Parameter Power-up to Read Operation Power-up to Write Operation Max. 100 5 Units s ms ENDURANCE AND DATA RETENTION Parameter Endurance Endurance Data Retention Min. 10,000 100,000 100 Max. Units Cycles Per Byte Cycles Per Page Years MODE SELECTION MODE READ STANDBY WRITE CE\ VIL VIH VIL VIL X X VIL OE\ VIL X VIH VIH X VIL VIL WE\ VIH X VIL VIH VIH X VIH I/O DOUT High-Z DIN High-Z ----Data Out (I/O7) A.C. CONDITIONS OF TEST Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels 0V to 3V 10ns 1.5V DESELECT WRITE INHIBIT DATA POLLING EQUIVALENT A.C. LOAD CURRENT SYMBOL TABLE Notes: (2) This parameter is periodically sampled and not 100% tested. AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 EEPROM E EPROM Austin Semiconductor, Inc. AS28C010 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION (-55oC < TC < 125oC; Vcc = 5V +10%) Test Conditions Input Pulse Levels: Input rise and fall times: Output Load: Reference levels for measuring timing: Symbol tRC tCE tAA tOE tLZ(3) tOLZ tHZ(3) tOHZ tOH (3) 0.0V to 3.0V < 20ns 1 TTL Gate +100pF (including scope and jig) 1.5V, 1.5V -12 -15 MIN MAX MIN MAX 120 120 120 50 0 0 50 50 0 0 0 0 50 50 0 150 150 150 50 0 0 50 50 0 -20 MIN MAX 200 200 200 50 0 0 50 50 -25 UNITS MIN MAX 250 250 250 50 ns ns ns ns ns ns ns ns ns Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE\ LOW to Active Output OE\ LOW to Active Output CE\ HIGH to High Z Output OE\ HIGH to High Z Output Output Hold from Address Change (3) Notes: 3) tLZ min., tOLZ min., and tOHZ are periodically sampled and not 100% tested. tHZ max. and tOHZ max. are measured, with CL=5pF, from the point when CE\ or OE\ return HIGH (whichever occurs first) to the time when the outputs are no longer driven. AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS SYMBOL PARAMETER tWC Write Cycle Time tAS Address Setup Time tAH tcs tCH tCW tOES tOEH tWP tWPH tDV tDS tDH tDW tBLC AS28C010 Rev. 1.5 5/06 MIN 0 50 0 0 100 10 10 100 100 MAX 10 UNITS ms ns ns ns ns ns ns ns ns ns s ns ns s Address Hold Time Write Setup Time Write Hold Time CE\ Pulse Width OE\ HIGH Setup Time OE\ HIGH Hold Time WE\ Pulse Width WE\ HIGH Recovery Data Valid Data Setup Data Hold Delay to Next Write Byte Load Cycle 1 50 0 10 0.20 6 100 s Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. EEPROM E EPROM Austin Semiconductor, Inc. READ CYCLE tRC ADDRESS AS28C010 CE\ tCE tOE OE\ VIH tOLZ tLE DATA I/O HIGH Z tOH DATA VALID tAA tOHZ tHZ DATA VALID WE\ SOFTWARE DATA PROTECTION TIMING WAVEFORM (protection mode) Vcc CE\ WE\ AAAA or 2AAA tBLC tWC Address Data 5555 AA 55 5555 A0 SOFTWARE DATA PROTECTION TIMING WAVEFORM (non-protection mode) Vcc CE\ WE\ AAAA or 2AAA AAAA or 2AAA { tWC 55 5555 20 Write Address Write Data Normal active mode Address Data AS28C010 Rev. 1.5 5/06 5555 AA 55 5555 5555 80 AA Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 EEPROM E EPROM Austin Semiconductor, Inc. WE\ CONTROLLED WRITE CYCLE tWC ADDRESS tAS CE\ tCS tAH tCH AS28C010 OE\ tOES tWP tOEH WE\ tDV DATA IN DATA VALID tDS DATA OUT HIGH Z tWPH tDH CE\ CONTROLLED WRITE CYCLE tWC ADDRESS tAS CE\ tOES OE\ tOEH tCS tDV DATA IN DATA VALID tDS DATA OUT AS28C010 Rev. 1.5 5/06 tAH tCW tWPH WE\ tCH tDH HIGH Z Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 EEPROM E EPROM Austin Semiconductor, Inc. AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 EEPROM E EPROM Austin Semiconductor, Inc. PAGE WRITE CYCLE OE\* AS28C010 CE\ tWP WE\ tWPH tBLC ADDRESS ** I/O BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n+1 LAST BYTE BYTE n+2 * Between successive byte writes within a page write operation, OE\ can bee strobed LOW: e.g. this can be done with CE\ and WE\ HIGH to fetch data from another memory device within the system for the next write; or with WE\ HIGH and CE\ LOW effectively performing a polling operation. **: 1- For each successive write within the page write operation A8-A16 should be the same or writes to an unknown address could occur. 2– The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either CE\ or WE\ controlled write cycle timing. AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 EEPROM E EPROM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #306 (Package Designator F) SMD 5962-38267, Case Outline M L E AS28C010 e b D H Top View A1 c D2 E1 Q A SYMBOL A A1 b c D D2 E E1 e H L Q SMD SPECIFICATIONS MIN MAX 0.097 0.123 0.090 0.110 0.015 0.019 0.003 0.007 0.810 0.830 0.745 0.755 0.425 0.445 0.330 0.356 0.045 0.055 1.000 1.100 0.290 0.310 0.026 0.037 NOTE: All drawings are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 EEPROM E EPROM Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* AS28C010 Symbol A b b1 b2 b3 c c1 D E E2 E3 e eA Note Min --.014 .014 .045 .023 .008 .008 --.510 Max Note Symbol Min Max Note .225 eA/2 .300 BSC .026 2 L .125 .200 8 .023 3 Q .015 .070 9 .065 4 Q1 .045 5 S1 .005 --10 .018 2 S2 .005 --11 O O 90 105 .015 3 a 1.680 6 aaa --- .015 .620 6 bbb --- .030 ccc --- .010 M --- .0015 2 N 12 .100 BSC 32 .600 BSC 1,14 NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. The b2 minimum dimension of .045 inch (1.14 mm) was implemented 30 September 1992. Until that date, a minimum dimension of .038 (0.97 mm) was acceptable. See 5.2.4 5. Corner leads (1, N, N/2, and N/2+1) may be configured as shown in detail A. For this configuration dimension b3 replaces dimension b2. 6. This dimension allows for off-center lid, meniscus, and glass overrun. 8. Pointed or rounded lead tips as shown in details B and C are preferred to ease insertion, but are not mandatory. 9. Dimension Q shall be measured from the seating plane to the base plane. 10. Measure dimension S1 at all four corners, see 5.2.5. 11. Measure dimension S2 from the top of the ceramic body to the nearest metallization or lead 12. N is the maximum number of terminal positions. 14. See tables VI and VII for descriptive type designators. *All measurements are in inches. AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12 EEPROM E EPROM Austin Semiconductor, Inc. AS28C010 ORDERING INFORMATION EXAMPLE: AS28C010CW-15/883C Device Number AS28C010 AS28C010 AS28C010 AS28C010 Package Type CW CW CW CW Speed ns -12 -15 -20 -25 Process /* /* /* /* EXAMPLE: AS28C010F-15/883C Device Number AS28C010 AS28C010 AS28C010 AS28C010 Package Type F F F F Speed ns -12 -15 -20 -25 Process /* /* /* /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Class M Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13 EEPROM E EPROM Austin Semiconductor, Inc. AS28C010 ASI TO DSCC PART NUMBER CROSS REFERENCE* Package Designator CW ASI Part # AS28C010CW-25 AS28C010CW-20 AS28C010CW-15 AS28C010CW-12 SMD Part# 5962-3826701MXA 5962-3826703MXA 5962-3826705MXA 5962-3826707MXA Package Designator F ASI Part # AS28C010F-25 AS28C010F-20 AS28C010F-15 AS28C010F-12 SMD Part# 5962-3826701MZA 5962-3826703MZA 5962-3826705MZA 5962-3826707MZA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 14